GAN GROWTH BY A CONTROLLABLE RF-EXCITED NITROGEN-SOURCE

被引：41

作者：

VANHOVE, JM ^{[1
]}

COSIMINI, GJ ^{[1
]}

NELSON, E ^{[1
]}

WOWCHAK, AM ^{[1
]}

CHOW, PP ^{[1
]}

机构：

[1] SVT ASSOCIATES,EDEN PRAIRIE,MN 55344

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0022-0248(95)80071-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The group III nitrides have attracted increasing interest because of their significant potential in optoelectronics such as blue emitter and high temperature electronics. In order to take advantage of bandgap engineering of heterostructures such as GaN/AlN, a controllable growth technique is highly desired. The growth of group III nitrides by MBE (molecular beam epitaxy) requires using energetic nitrogen species which can be generated by techniques such as ion, RF (radio-frequency) and ECR (electron cyclotron resonance) sources. We report nitride results using an RF source to achieve epitaxy on sapphire. The nitrogen flux. has been carefully characterized and related to the GaN quality. Schottky diode and ultra-violet (UV) photo-response are also reported.

引用

页码：908 / 911

页数：4

共 10 条

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