CARBON DOPING BY A COMPACT ELECTRON-BEAM SOURCE

被引：9

作者：

VANHOVE, JM ^{[1
]}

CHOW, PP ^{[1
]}

ROSAMOND, MF ^{[1
]}

CARPENTER, GL ^{[1
]}

CHOW, LA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MECH ENGN,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon doping in III-V compounds has generated much attention because Of applications in high temperature and high current devices. We present results using a novel electron beam carbon source for doping GaAs and GaSb. The source construction allows normal effusion cell geometry and utilizes electron bombardment for evaporation from a carbon rod. Mass spectrometer data showed the carbon flux contained C1, C2, and C3 Species. For GaAs, controllable hole doping densities between 3x10(15) cm-3 and 5x10(19) were obtained. For GaSb, carbon doping resulted in P-type material with hole densities ranging from the background level of 2x10(16) to 3X10(20) cm-3 for specular film morphology. Hole mobility values for GaAs and GaSb are comparable to published data.

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页码：1200 / 1202

页数：3

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