CARBON DOPING FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

ITO, H

NAKAJIMA, O

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon doping in GaAs is investigated using solid-source molecular-beam epitaxy. The proportion of inactive C atoms in GaAs layers is found to increase when the free-carrier concentration is higher than about 10(18)/cm3. The current gain of AlGaAs/GaAs heterojunction bipolar transistors decreases rapidly with increasing base doping. The gradient of this tendency is much steeper than for inverse base doping, indicating the introduction of additional nonradiative recombination centers in heavily doped regions. A high current gain of 300 is achieved with a base doping of 2.5 X 10(18)/cm3.

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页码：2099 / 2101

页数：3

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