CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

被引：154

作者：

KUECH, TF

TISCHLER, MA

WANG, PJ

SCILLA, G

POTEMSKI, R

CARDONE, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 14期

关键词：

D O I：

10.1063/1.100008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1317 / 1319

页数：3

相关论文

共 15 条

[1] OMCVD GROWTH OF GAAS AND ALGAAS USING A SOLID AS SOURCE
BHAT, R
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (04) : 433 - 449
[2] BORISOVA LA, 1978, IAN SSSR NEORG MATER, V14, P1790
[3] HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD
DENBAARS, SP
MAA, BY
DAPKUS, PD
DANNER, AD
LEE, HC
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 188 - 193
[4] PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS
KUECH, TF
WOLFORD, DJ
VEUHOFF, E
DELINE, V
MOONEY, PM
POTEMSKI, R
BRADLEY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 632 - 643
[5] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS
KUECH, TF
VEUHOFF, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 148 - 156
[6] KUECH TF, IN PRESS J CRYSTAL G
[7] REACTION-MECHANISMS IN THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
LARSEN, CA
BUCHAN, NI
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 480 - 482
[8] INSITU MASS-SPECTROSCOPY AND THERMOGRAVIMETRIC STUDIES OF GAAS MOCVD GAS-PHASE AND SURFACE-REACTIONS
LEE, PW
OMSTEAD, TR
MCKENNA, DR
JENSEN, KF
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) : 165 - 174
[9] LEE PW, IN PRESS J CRYSTAL G
[10] INVESTIGATION OF CARBON INCORPORATION IN GAAS USING C-13-ENRICHED TRIMETHYLARSENIC AND (CH4)-C-13
LUM, RM
KLINGERT, JK
KISKER, DW
TENNANT, DM
MORRIS, MD
MALM, DL
KOVALCHICK, J
HEIMBROOK, LA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) : 101 - 104