ELECTRON TUNNELING INTO AMORPHOUS-GERMANIUM

被引：15

作者：

OSMUN, JW ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.11.5008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5008 / 5022

页数：15

共 36 条

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