SURFACE-ANALYSIS TO STUDY THE IMPROVEMENTS OF SILICON-NITRIDE GALLIUM-ARSENIDE INTERFACE PROPERTIES

被引：3

作者：

CASSETTE, S

PLAIS, F

OLIVIER, J

机构：

[1] Lcr, Orsay

来源：

SURFACE AND INTERFACE ANALYSIS | 1990年 / 16卷 / 1-12期

关键词：

D O I：

10.1002/sia.740160112

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It has been shown that NH3, plasma treatment of GaAs surfaces before deposition of plasma‐enhanced chemical vapour deposited silicon nitride significantly improves the SiNH/GaAs interface properties. The decrease of surface state density together with the increase of Fermi level excursion in the energy gap are correlated with chemical spectroscopic measurements. Copyright © 1990 John Wiley & Sons Ltd.

引用

页码：41 / 45

页数：5

共 6 条

[1] XPS STOICHIOMETRY MEASUREMENTS ON SURFACES OF III-V CRYSTALLINE COMPOUNDS [J].