INTERFACIAL REACTION IN POLYCIDE MOS GATE STRUCTURE EMPLOYING CVD TUNGSTEN SILICIDE

被引：8

作者：

HARA, T

ENOMOTO, S

JINBO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 07期

关键词：

D O I：

10.1143/JJAP.23.L455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L455 / L457

页数：3

共 7 条

[1]

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[2]

ENOMOTO S, 1983, 2ND P S ION BEAM TEC, P12

[3]

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[4] STUDIES OF STEAM-OXIDIZED WSI2 BY AUGER SPUTTER PROFILING [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (03) :305-307

[5] PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J].

SARASWAT, KC ;

BRORS, DL ;

FAIR, JA ;

MONNIG, KA ;

BEYERS, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1497-1505

[6] EFFECT OF SCALING OF INTERCONNECTIONS ON THE TIME-DELAY OF VLSI CIRCUITS [J].

SARASWAT, KC ;

MOHAMMADI, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :645-650

[7] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON [J].

TSAI, MY ;

DHEURLE, FM ;

PETERSSON, CS ;

JOHNSON, RW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5350-5355

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