PHOTOEMISSION-STUDIES OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON

被引：14

作者：

RICHTER, H

LEY, L

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:1981455

中图分类号：

学科分类号：

摘要：

引用

页码：261 / 264

页数：4

共 14 条

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SOLID STATE COMMUNICATIONS, 1981, 37 (12) :993-996

[3] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J].

IQBAL, Z ;

WEBB, AP ;

VEPREK, S .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :163-165

[4]

Joannopoulos J., 1976, SOLID STATE PHYS, V31, P71

[5] EFFECT OF DIMENSIONS ON THE VIBRATIONAL FREQUENCIES OF THIN SLABS OF SILICON [J].

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BALKANSKI, M .

PHYSICAL REVIEW B, 1980, 21 (04) :1543-1548

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KOBLISKA, RJ ;

SOLIN, SA .

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[7] ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM AND SILICON [J].

KRAMER, B .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (02) :501-&

[8] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].

LEY, L ;

SHIRLEY, DA ;

POLLAK, R ;

KOWALCZYK, S .

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[9]

LEY L, 1981, 9TH P INT C AM LIQ S

[10] RAMAN STUDY OF LASER ANNEALED SILICON [J].

MORHANGE, JF ;

KANELLIS, G ;

BALKANSKI, M .

SOLID STATE COMMUNICATIONS, 1979, 31 (11) :805-808

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