NUMERICAL-SOLUTION OF THE SEMICONDUCTOR TRANSPORT-EQUATIONS WITH CURRENT BOUNDARY-CONDITIONS

被引:17
作者
GROSSMAN, BM [1 ]
HARGROVE, MJ [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
关键词
D O I
10.1109/T-ED.1983.21263
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1092 / 1096
页数:5
相关论文
共 15 条
[1]   FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J].
BUTURLA, EM ;
COTTRELL, PE ;
GROSSMAN, BM ;
SALSBURG, KA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) :218-231
[2]   SIMULATION OF SEMICONDUCTOR TRANSPORT USING COUPLED AND DECOUPLED SOLUTION TECHNIQUES [J].
BUTURLA, EM ;
COTTRELL, PE .
SOLID-STATE ELECTRONICS, 1980, 23 (04) :331-334
[3]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[4]  
COTTRELL PE, 1979, 1 P NASECODE C, P31
[5]   TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].
CROWELL, CR ;
SZE, SM .
APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&
[6]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[7]   AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].
DZIEWIOR, J ;
SCHMID, W .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348
[8]  
GHANDHI SK, 1968, THEORY PRACTICE MICR, P295
[9]  
HACHTEL G, 1974, 8TH AS C CIRC SYST P
[10]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387