APPLICATION OF SYNCHROTRON X-RAY-LITHOGRAPHY TO FABRICATE FULLY SCALED 0.5 MU-M COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR-DEVICES AND CIRCUITS

被引：16

作者：

WANG, LK

SILVERMAN, J

SEEGER, D

PETRILLO, E

DIMILIA, V

KATCOFF, D

KWIETNIAK, K

ACOSTA, R

PETRILLO, K

BRODSKY, S

BABICH, I

VLADIMIRSKY, O

VOELKER, H

VISWANATHAN, R

WARLAUMONT, J

WILSON, A

DEVENUTO, R

HILL, B

HSIA, LC

RIPPSTEIN, R

WASIK, C

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

[2] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1662 / 1666

页数：5

共 10 条

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SEEGER D, 1988, P MICROCIRCUIT ENG C

[7] FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION [J].

SILVERMAN, JP ;

DIMILIA, V ;

KATCOFF, D ;

KWIETNIAK, K ;

SEEGER, D ;

WANG, LK ;

WARLAUMONT, JM ;

WILSON, AD ;

CROCKATT, D ;

DEVENUTO, R ;

HILL, B ;

HSIA, LC ;

RIPPSTEIN, R .

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[8]

SUZUKI K, 1986, NEC R D JUL

[9] FULLY SCALED 0.5 MU-M METAL-OXIDE SEMICONDUCTOR CIRCUITS BY SYNCHROTRON X-RAY-LITHOGRAPHY - MASK FABRICATION AND CHARACTERIZATION [J].

VISWANATHAN, R ;

ACOSTA, RE ;

SEEGER, D ;

VOELKER, H ;

WILSON, A ;

BABICH, I ;

MALDONADO, J ;

WARLAUMONT, J ;

VLADIMIRSKY, O ;

HOHN, F ;

CROCKATT, D ;

FAIR, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2196-2201

[10]

Wang L. K., 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers, P13

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