DRAMATIC PHOTOINDUCTION OF HOLE TUNNELING IN DOUBLE-QUANTUM WELLS WITH BUILT-IN PIEZOELECTRIC FIELDS

被引：33

作者：

BORING, P ^{[1
]}

GIL, B ^{[1
]}

MOORE, KJ ^{[1
]}

机构：

[1] MANCHESTER METROPOLITAN UNIV,DEPT MATH & PHYS,MANCHESTER M1 5GD,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.71.1875

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that efficient tunneling of holes can be produced in double quantum wells with built-in piezoelectric fields by the photoscreening of that piezoelectric field. Our observation was made at low temperatures by comparing the behavior of Ga0.92In0.08As-GaAs strained-layer double quantum wells grown along the (111) and (001) directions and tuning the densities of photoinjected carriers over several decades. Interpretation of the experimental data is made by comparison with Hartree calculations including the space charge effects. In addition to this, we also report the observation of many-body interactions at high photocarrier densities.

引用

页码：1875 / 1878

页数：4

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