SURFACE-STRUCTURE OF THIN EPITAXIAL COSI2 GROWN ON SI(111)

被引：80

作者：

HELLMAN, F ^{[1
]}

TUNG, RT ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.37.10786

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10786 / 10794

页数：9

共 32 条

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