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AUGER DEPTH PROFILING OF AU-ALXGA1-XAS INTERFACES AND LPE ALXGA1-XAS-GAAS HETEROJUNCTIONS
被引:20
作者
:
GARNER, CM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
GARNER, CM
SHEN, YD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SHEN, YD
KIM, JS
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
KIM, JS
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SPICER, WE
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HARRIS, JS
EDWALL, DD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
EDWALL, DD
SAHAI, R
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SAHAI, R
机构
:
[1]
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2]
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1977年
/ 14卷
/ 04期
关键词
:
D O I
:
10.1116/1.569408
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:985 / 988
页数:4
相关论文
共 15 条
[1]
EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 341
-
&
[2]
CHANG CC, 1974, CHARACTERIZATION SOL, P509
[3]
SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHEUNG, DT
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(03)
: 263
-
266
[4]
EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
CHEUNG, DT
SHEN, CC
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
SHEN, CC
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
: 5226
-
5228
[5]
THEORETICAL-ANALYSIS OF ALXGA1-XAS-GAAS GRADED BAND-GAP SOLAR-CELL
HUTCHBY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
HUTCHBY, JA
FUDURICH, RL
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
FUDURICH, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(07)
: 3140
-
3151
[6]
THEORETICAL OPTIMIZATION AND PARAMETRIC STUDY OF N-ON-P ALXGA1-XAS-GAAS GRADED BAND-GAP SOLAR-CELL
HUTCHBY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
HUTCHBY, JA
FUDURICH, RL
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
FUDURICH, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(07)
: 3152
-
3158
[7]
GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY
LUDEKE, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LUDEKE, R
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ESAKI, L
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHANG, LL
[J].
APPLIED PHYSICS LETTERS,
1974,
24
(09)
: 417
-
419
[8]
N-N SEMICONDUCTOR HETEROJUNCTIONS
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
SOLID-STATE ELECTRONICS,
1963,
6
(02)
: 121
-
132
[9]
PEKKERAR M, 1974, J APPL PHYS, V45, P4652
[10]
DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER
PRUNIAUX, BR
论文数:
0
引用数:
0
h-index:
0
PRUNIAUX, BR
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(04)
: 1980
-
&
←
1
2
→
共 15 条
[1]
EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 341
-
&
[2]
CHANG CC, 1974, CHARACTERIZATION SOL, P509
[3]
SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHEUNG, DT
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(03)
: 263
-
266
[4]
EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
CHEUNG, DT
SHEN, CC
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
SHEN, CC
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
: 5226
-
5228
[5]
THEORETICAL-ANALYSIS OF ALXGA1-XAS-GAAS GRADED BAND-GAP SOLAR-CELL
HUTCHBY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
HUTCHBY, JA
FUDURICH, RL
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
FUDURICH, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(07)
: 3140
-
3151
[6]
THEORETICAL OPTIMIZATION AND PARAMETRIC STUDY OF N-ON-P ALXGA1-XAS-GAAS GRADED BAND-GAP SOLAR-CELL
HUTCHBY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
HUTCHBY, JA
FUDURICH, RL
论文数:
0
引用数:
0
h-index:
0
机构:
NASA LANGLEY RES CTR,HAMPTON,VA 23365
FUDURICH, RL
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(07)
: 3152
-
3158
[7]
GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY
LUDEKE, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LUDEKE, R
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ESAKI, L
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHANG, LL
[J].
APPLIED PHYSICS LETTERS,
1974,
24
(09)
: 417
-
419
[8]
N-N SEMICONDUCTOR HETEROJUNCTIONS
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
SOLID-STATE ELECTRONICS,
1963,
6
(02)
: 121
-
132
[9]
PEKKERAR M, 1974, J APPL PHYS, V45, P4652
[10]
DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER
PRUNIAUX, BR
论文数:
0
引用数:
0
h-index:
0
PRUNIAUX, BR
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(04)
: 1980
-
&
←
1
2
→