MILLIMETER-WAVE MONOLITHIC INTEGRATED-CIRCUIT CHARACTERIZATION BY A PICOSECOND OPTOELECTRONIC TECHNIQUE

被引：16

作者：

HUNG, HLA

POLAKDINGELS, P

WEBB, KJ

SMITH, T

HUANG, HC

LEE, CH

机构：

[1] UNIV RES FDN,GREENBELT,MD 20770

[2] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 08期

关键词：

D O I：

10.1109/22.31083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1223 / 1231

页数：9

共 17 条

[1]

Auston D. H., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P2

[2] IMPULSE-RESPONSE OF PHOTOCONDUCTORS IN TRANSMISSION-LINES [J].

AUSTON, DH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) :639-648

[3] PICOSECOND OPTOELECTRONIC MEASUREMENT OF THE HIGH-FREQUENCY SCATTERING PARAMETERS OF A GaAs FET. [J].

Cooper, Donald E. ;

Moss, Steven C. .

IEEE Journal of Quantum Electronics, 1986, QE-22 (01) :94-100

[4] CARRIER LIFETIME VERSUS ION-IMPLANTATION DOSE IN SILICON ON SAPPHIRE [J].

DOANY, FE ;

GRISCHKOWSKY, D ;

CHI, CC .

APPLIED PHYSICS LETTERS, 1987, 50 (08) :460-462

[5]

GRISCHKOWSKY D, 1985, PIOCESECOND ELECTRON, V2

[6] OBSERVED CIRCUIT LIMITS TO TIME RESOLUTION IN CORRELATION-MEASUREMENTS WITH SI-ON-SAPPHIRE, GAAS, AND INP PICOSECOND PHOTOCONDUCTORS [J].

HAMMOND, RB ;

PAULTER, NG ;

WAGNER, RS .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :289-291

[7]

HUNG HL, 1987, 12TH INT C INFR MM W, P87

[8]

HUNG HLA, 1989, SPIE P OPT TECHNOL M, V1102

[9]

HUNG HLA, 1987, JUN IEEE MICR MILL W, P97

[10] GENERATION OF SUBPICOSECOND ELECTRICAL PULSES ON COPLANAR TRANSMISSION-LINES [J].

KETCHEN, MB ;

GRISCHKOWSKY, D ;

CHEN, TC ;

CHI, CC ;

DULING, IN ;

HALAS, NJ ;

HALBOUT, JM ;

KASH, JA ;

LI, GP .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :751-753

← 1 2 →