OBSERVATION OF DEEP LEVELS ASSOCIATED WITH DISLOCATIONS IN N-TYPE HG0.3CD0.7TE

Deep level transient spectroscopy (DLTS) has been used to study the traps associated with dislocations in n-type Hg0.3Cd0.7Te. Dislocations have been generated by ion implantation at high fluence. Two of the broadened lines (E1 = E(c) - 0.22 eV and E3 = E(c) - 0.34 eV), we have observed, show a logarithmic dependence with the filling pulse. They are characteristic of point defect clouds surrounding or generated by the dislocations. An unusual broadened line (E2 = E(c) - 0.27 eV) has also been observed, its amplitude decreases for filling pulses longer than 50 mu s. This can be explained by a configuration change of the defect leading to the appearance of a new DLTS line. In addition, an electron trap (EP4 = E(c) - 0.49 eV), which seems to behave like an isolated point defect, has also been found.