FULLY IMPLANTED GAAS MILLIMETER-WAVE MIXER DIODE USING HIGH-ENERGY IMPLANTATION

被引：10

作者：

THOMPSON, P ^{[1
]}

DIETRICH, H ^{[1
]}

ANAND, Y ^{[1
]}

HIGGINS, V ^{[1
]}

HILLSON, J ^{[1
]}

机构：

[1] M-A COM SEMICOND PROD INC,BURLINGTON,MA 01803

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 14期

关键词：

D O I：

10.1049/el:19870515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：725 / 727

页数：3

共 8 条

[1] PLANAR MOCVD GAALAS/GAAS HIGH-FREQUENCY MIXER DIODES [J].

CHRISTOU, A ;

PECKERAR, MC .

ELECTRONICS LETTERS, 1985, 21 (07) :305-307

[2] THIN MBE GAAS MILLIMETRE-WAVE MIXER DIODE USING GE SUBSTRATE [J].

CHRISTOU, A ;

DAVEY, JE ;

COVINGTON, D .

ELECTRONICS LETTERS, 1982, 18 (09) :367-368

[3]

HEATON JL, 1983, ELECTRON LETT, V9, P749

[4] CRYOGENIC MILLIMETER-WAVE RECEIVER USING MOLECULAR-BEAM EPITAXY DIODES [J].

LINKE, RA ;

SCHNEIDER, MV ;

CHO, AY .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (12) :935-938

[5]

THOMPSON PE, 1985, P SOC PHOTO-OPT INST, V530, P35, DOI 10.1117/12.946465

[6] MEV SI IMPLANTATION IN GAAS [J].

THOMPSON, PE ;

DIETRICH, HB ;

INGRAM, DC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :287-291

[7]

THOMPSON PE, IN PRESS 13TH P INT

[8]

TORREY HC, 1948, MIT RAD LABORATORY S, V15

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