CRYOGENIC MILLIMETER-WAVE RECEIVER USING MOLECULAR-BEAM EPITAXY DIODES

被引：51

作者：

LINKE, RA ^{[1
]}

SCHNEIDER, MV ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1978年 / 26卷 / 12期

关键词：

D O I：

10.1109/TMTT.1978.1129524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A millimeter-wave cryogenic receiver has been built for the 6O-90-GHz frequency band using GaAs mixer diodes prepared by molecular beam epitaxy (MBE). The diodes are mounted in a reduced-height image rejecting waveguide mixer which is followed by a cooled parametric amplifier at 4.5-5.0 GHz. At a temperature of 18 K the receiver has a total single-sideband (SSB) system temperature of 312 K at a frequency of 81 GHz. This is the lowest system temperature ever reported for a resistive mixer receiver. The low-noise operation of the mixer is seen to be a result of 1) the short-circuiting of the noise entering the. image port and 2) an MBE mixer diode with. a noise temperature which is consistent with the theoretical shot noise from the junction and the thermal noise from the series resistance. © 1978 IEEE

引用

页码：935 / 938

页数：4

共 11 条

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