MULTIEXPONENTIAL ANALYSIS OF DLTS

被引:37
作者
MORIMOTO, J [1 ]
KIDA, T [1 ]
MIKI, Y [1 ]
MIYAKAWA, T [1 ]
机构
[1] NATL DEF ACAD,DEPT APPL PHYS,YOKOSUKA,KANAGAWA 239,JAPAN
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 03期
关键词
D O I
10.1007/BF00620735
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:197 / 202
页数:6
相关论文
共 15 条
[1]  
Bourgoin J., 1983, SPRINGER SER SOLID S, V35
[2]   THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON [J].
ENGSTROM, O ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :831-837
[3]  
Kida T., UNPUB
[4]   THE ANALYSIS OF EXPONENTIAL AND NON-EXPONENTIAL TRANSIENTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
KIRCHNER, PD ;
SCHAFF, WJ ;
MARACAS, GN ;
EASTMAN, LF ;
CHAPPELL, TI ;
RANSOM, CM .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6462-6470
[5]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[6]  
LANG DV, 1979, TOP APPL PHYS, V37, pCH3
[7]   DEEP LEVEL TRANSIENT SPECTROSCOPY EVALUATION OF NON-EXPONENTIAL TRANSIENTS IN SEMICONDUCTOR ALLOYS [J].
OMLING, P ;
SAMUELSON, L ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5117-5122
[8]  
PROVENCHER S, COMMUNICATION
[9]  
Provencher S. W., 1976, Journal of Chemical Physics, V64, P2772, DOI 10.1063/1.432601
[10]   FOURIER METHOD FOR ANALYSIS OF EXPONENTIAL DECAY CURVES [J].
PROVENCHER, SW .
BIOPHYSICAL JOURNAL, 1976, 16 (01) :27-41