GROWTH OF GAAS/ERAS/GAAS STRUCTURES BY MIGRATION-ENHANCED EPITAXY

被引：18

作者：

YAMAGUCHI, H

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 19期

关键词：

D O I：

10.1063/1.107020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monocrystalline GaAs/ErAs/GaAs structures are fabricated by migration-enhanced epitaxy at 320-degrees-C. When the ErAs layer thickness is less than 3 monolayers, reflection high-energy electron diffraction patterns, double crystal x-ray diffraction analysis, and transmission electron microscopy observations show successful overgrowth of GaAs on the ErAs layer. Distinct satellite peaks are observed in an x-ray rocking curve of an ErAs/GaAs superlattice grown under a similar condition, indicating that high-quality multilayer structures with very thin ErAs layers can be fabricated by migration-enhanced epitaxy.

引用

页码：2341 / 2343

页数：3

共 16 条

[1] ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING
ALLEN, SJ
TABATABAIE, N
PALMSTROM, CJ
HULL, GW
SANDS, T
DEROSA, F
GILCHRIST, HL
GARRISON, KC
[J]. PHYSICAL REVIEW LETTERS, 1989, 62 (19) : 2309 - 2312
[2] BAND-STRUCTURE, QUANTUM CONFINEMENT, AND EXCHANGE SPLITTING IN SC1-XERXAS EPITAXIAL LAYERS BURIED IN GAAS
ALLEN, SJ
DEROSA, F
PALMSTROM, CJ
ZRENNER, A
[J]. PHYSICAL REVIEW B, 1991, 43 (12): : 9599 - 9609
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE MATCHED GAAS/ERP0.6AS0.4/(001) AND (111) GAAS HETEROSTRUCTURES
CAULET, J
LECORRE, A
GUENAIS, B
ROPARS, G
GUIVARCH, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) : 309 - 313
[4] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02): : 169 - 179
[5] GROWTH OF ZNSE/GAAS SUPERLATTICES BY MIGRATION-ENHANCED EPITAXY
KOBAYASHI, N
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (02): : L236 - L239
[6] GROWTH OF MATCHED METALLIC ERP0.6AS0.4 LAYERS ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM
LECORRE, A
CAULET, J
GUIVARCH, A
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (22) : 2298 - 2300
[7] X-RAY-SCATTERING STUDY OF LATTICE-RELAXATION IN ERAS EPITAXIAL LAYERS ON GAAS
MICELI, PF
PALMSTROM, CJ
MOYERS, KW
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (15) : 1602 - 1604
[8] EPITAXIAL-GROWTH OF ERAS ON (100)GAAS
PALMSTROM, CJ
TABATABAIE, N
ALLEN, SJ
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2608 - 2610
[9] LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS
PALMSTROM, CJ
MOUNIER, S
FINSTAD, TG
MICELI, PF
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (04) : 382 - 384
[10] GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES
PALMSTROM, CJ
GARRISON, KC
MOUNIER, S
SANDS, T
SCHWARTZ, CL
TABATABAIE, N
ALLEN, SJ
GILCHRIST, HL
MICELI, PF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 747 - 752

← 1 2 →