MOLECULAR-BEAM EPITAXIAL-GROWTH OF PYRAMIDAL STRUCTURES ON PATTERNED GAAS(100) SUBSTRATES FOR 3 DIMENSIONALLY CONFINED STRUCTURES

被引：19

作者：

LOPEZ, M

ISHIKAWA, T

NOMURA, Y

机构：

[1] Optoelectronics Technology Research Laboratory, Ibaraki 300-26, 5-5 Tohkodai, Tsukuba

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 25期

关键词：

MOLECULAR BEAM EPITAXIAL GROWTH; SEMICONDUCTOR QUANTUM DOTS;

D O I：

10.1049/el:19931494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth by molecular-beam epitaxy of pyramidal structures on GaAs(100) patterned substrates is described. Pyramidal structures defined by four {110} facets were realised by the growth of GaAs on square mesas with sides along the [010] and [001] directions. These structures can be used for the fabrication of three-dimensionally confined structures.

引用

收藏

页码：2225 / 2227

页数：3

相关论文

共 6 条

[1] ANISOTROPIC LATERAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY [J].

KAWABE, M ;

SUGAYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1077-L1079

[2] MOLECULAR-BEAM EPITAXY OF GAAS/ALAS ON MESA STRIPES ALONG THE [001] DIRECTION FOR QUANTUM-WIRE FABRICATION [J].

LOPEZ, M ;

ISHIKAWA, T ;

NOMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8A) :L1051-L1054

[3] INSITU APPROACH TO REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA SUBSTRATE ENCODED SIZE REDUCING EPITAXY ON NONPLANAR PATTERNED SUBSTRATES [J].

MADHUKAR, A ;

RAJKUMAR, KC ;

CHEN, P .

APPLIED PHYSICS LETTERS, 1993, 62 (13) :1547-1549

[4] ENHANCED CRYSTALLOGRAPHIC SELECTIVITY IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MESAS AND FORMATION OF (001)-(111)B FACET STRUCTURES FOR EDGE QUANTUM WIRES [J].

NAKAMURA, Y ;

KOSHIBA, S ;

TSUCHIYA, M ;

KANO, H ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1991, 59 (06) :700-702

[5] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

TSANG, WT ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :293-296

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ALAS AND GAAS ALGAAS QUANTUM-WELLS ON SUB-MICRON-PERIOD CORRUGATED SUBSTRATES [J].

TURCO, FS ;

SIMHONY, S ;

KASH, K ;

HWANG, DM ;

RAVI, TS ;

KAPON, E ;

TAMARGO, MC .

JOURNAL OF CRYSTAL GROWTH, 1990, 104 (04) :766-772