THE RESISTANCE OF LASER-DIFFUSED DIODE LINKS

被引：4

作者：

COHEN, SS

WYATT, PW

CHAPMAN, GH

CANTER, JM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/16.24374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1220 / 1223

页数：4

共 14 条

[1]

BINDELS JFM, 1981, P IEEE INT SOLID STA, P82

[2] LASER-INDUCED DIODE LINKING FOR WAFER-SCALE INTEGRATION [J].

COHEN, SS ;

WYATT, PW ;

CHAPMAN, GH ;

CANTER, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) :1533-1550

[3] SHALLOW BORON-DOPED JUNCTIONS IN SILICON [J].

COHEN, SS ;

NORTON, JF ;

KOCH, EF ;

WEISEL, GJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1200-1213

[4]

COOK PW, 1975, APPL PHYS LETT, V26, P125

[5]

JESSHOPE C, 1986, WAFER SCALE INTEGRAT

[6]

KUHN L, 1974, IEEE IEDM, P557

[7]

Logue J. C., 1980, Proceedings of the IEEE International Conference on Circuits and Computers ICCC 80, P248

[8] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J].

MASETTI, G ;

SEVERI, M ;

SOLMI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :764-769

[9]

Nicolas G., 1986, Wafer Scale Integration. Proceedings of the IFIP WG 10.5 Workshop, P271

[10]

SAUCIER G, 1986, WAFER SCALE INTEGRAT

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