TEMPERATURE-DEPENDENCE OF INCORPORATION PROCESSES DURING HEAVY BORON DOPING IN SILICON MOLECULAR-BEAM EPITAXY

被引:35
作者
PARRY, CP
KUBIAK, RA
NEWSTEAD, SM
WHALL, TE
PARKER, EHC
机构
[1] Department of Physics, University of Warwick
关键词
D O I
10.1063/1.351363
中图分类号
O59 [应用物理学];
学科分类号
摘要
Boron doped layers were grown by silicon molecular beam epitaxy to establish incorporation processes at temperatures between 900 and 450-degrees-C. For temperatures exceeding 650-degrees-C a surface accumulated phase of boron was formed when doping levels exceeded solid solubility limits. The properties of this surface phase were used to determine solubility limits for boron in silicon. Above 750-degrees-C, the measured equilibrium solubility limit was in the 10(19)-cm-3 range in good agreement with previously published annealing data and showing a gradual decrease with decreasing temperature. Below 650-degrees-C, the processes leading to the formation of the surface phase were kinetically limited, manifested by a sharp increase in boron solubility limit, with completely activated levels above 1 x 10(20) cm-3 realized. At intermediate growth temperatures the degree of dopant activation was found to be dependent on growth rate. The stability of fully activated highly-doped boron layers, grown at low temperatures, to ex situ annealing is also discussed.
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页码:118 / 125
页数:8
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