EXCITONS IN SILICON NANOSTRUCTURES

被引：8

作者：

ALLAN, G

DELERUE, C

LANNOO, M

机构：

[1] Institut d'Electronique et de Microélectronique du Nord

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90141-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The electronic structure of sigma-bonded silicon chains is calculated in the tight-binding approximation. The exciton spectrum is calculated by diagonalization of the full matrix of the Coulomb interaction taking into account the electron-hole exchange interaction. The energy, the size and the radiative lifetime of excitons are computed as a function of the size of the chain. The results show that chains of silicon atoms are probably not at the origin of the visible luminescence of porous silicon but could explain its fast band in the blue.

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页码：239 / 242

页数：4

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