ATOMIC-STRUCTURE OF (100) ZNSE/GAAS INTERFACES

被引：2

作者：

JOSIEK, A ^{[1
]}

ENDERLEIN, R ^{[1
]}

NEUGEBAUER, J ^{[1
]}

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,W-1000 BERLIN 33,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 02期

关键词：

D O I：

10.1016/0749-6036(92)90342-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the atomic structure of various monolayers as well as sequences of layers on (100) GaAs substrates, consisting of Zn, Se, Ga, and As. Ga-and As-rich substrate surfaces are distinguished. Total energies are obtained by means of self-consistent tight binding calculations. Various surfaces reconstructions of ZnSe layers are found depending on substrate coverages and layer terminations. The formation of Ga2As3 is demonstrated. No Zn2As3 growth is observed. © 1992.

引用

页码：225 / 230

页数：6

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