ATOMIC-STRUCTURE OF (100) ZNSE/GAAS INTERFACES

被引:2
作者
JOSIEK, A [1 ]
ENDERLEIN, R [1 ]
NEUGEBAUER, J [1 ]
机构
[1] MAX PLANCK GESELL,FRITZ HABER INST,W-1000 BERLIN 33,GERMANY
关键词
D O I
10.1016/0749-6036(92)90342-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the atomic structure of various monolayers as well as sequences of layers on (100) GaAs substrates, consisting of Zn, Se, Ga, and As. Ga-and As-rich substrate surfaces are distinguished. Total energies are obtained by means of self-consistent tight binding calculations. Various surfaces reconstructions of ZnSe layers are found depending on substrate coverages and layer terminations. The formation of Ga2As3 is demonstrated. No Zn2As3 growth is observed. © 1992.
引用
收藏
页码:225 / 230
页数:6
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