Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies

被引：18

作者：

Marshall, PW

Dale, CJ

Weatherford, TR

LaMacchia, M

Label, KA

机构：

[1] SFA INC,LANDOVER,MD 20785

[2] MOTOROLA INC,PHOENIX,AZ

[3] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.489225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects.

引用

收藏

页码：1844 / 1849

页数：6

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