Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer

被引：17

作者：

Marshall, PW

Dale, CJ

Weatherford, T

Carts, M

McMorrow, D

Peczalski, A

Baier, S

Nohava, J

Skogen, J

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] HONEYWELL SYST & RES CTR,BLOOMINGTON,MN 55420

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.489226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compare dynamic SEU characteristics of GaAs complementary HIGFET devices fabricated on conventional semi-insulating substrates versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion test results on shift register and flip-flop devices from the same process lot demonstrate that the LT GaAs layer provides immunity from upsets, even at an LET value of 90 MeV . cm(2)/mg. This result is also consistent with pulsed laser measurements performed on the same flip-flop circuits used in the ion test.

引用

收藏

页码：1850 / 1855

页数：6

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