INVESTIGATION OF THE COMPLEX PERMITTIVITY OF N-TYPE SILICON AT MILLIMETER WAVELENGTHS

被引：37

作者：

KINASEWITZ, RT ^{[1
]}

SENITZKY, B ^{[1
]}

机构：

[1] POLYTECH INST NEW YORK,FARMINGDALE,NY 11735

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3394 / 3398

页数：5

共 15 条

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