NORMAL MODES OF SEMICONDUCTOR P-N-JUNCTION DEVICES FOR MATERIAL-PARAMETER DETERMINATION

[1] GODLEWSKI MP, 1976, 18TH AIME EL MAT C

[2] LINDHOLM FA, 1975, 11TH PHOT SPEC C, V3

[3] NEUGROSCHEL A, UNPUBLISHED

[4] EQUIVALENT CIRCUIT MODEL IN SOLID-STATE ELECTRONICS .3. CONDUCTION AND DISPLACEMENT CURRENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1547 - +

[5] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[7] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[1] GODLEWSKI MP, 1976, 18TH AIME EL MAT C

[2] LINDHOLM FA, 1975, 11TH PHOT SPEC C, V3

[3] NEUGROSCHEL A, UNPUBLISHED

[4] EQUIVALENT CIRCUIT MODEL IN SOLID-STATE ELECTRONICS .3. CONDUCTION AND DISPLACEMENT CURRENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1547 - +

[5] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[7] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489