2-SEGMENT CAVITY THEORY FOR MODE SELECTION IN SEMICONDUCTOR-LASERS

被引：19

作者：

ADAMS, MJ ^{[1
]}

BUUS, J ^{[1
]}

机构：

[1] TECH UNIV DENMARK, INST ELECTROMAGNET, DK-2800 LYNGBY, DENMARK

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 02期

关键词：

D O I：

10.1109/JQE.1984.1072364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：99 / 103

页数：5

共 15 条

[1]

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[6] DYNAMIC SPECTRAL WIDTH OF RAPIDLY MODULATED 1.58 MU-M GALNASP/INP BURIED-HETEROSTRUCTURE DISTRIBUTED-BRAGG-REFLECTOR INTEGRATED-TWIN-GUIDE LASERS [J].

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[7]

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[8] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION [J].

MATSUOKA, T ;

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ELECTRONICS LETTERS, 1982, 18 (01) :27-28

[9] GAIN SPECTRA OF QUATERNARY SEMICONDUCTORS [J].

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ADAMS, MJ .

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[10] EXTERNAL CAVITY CONTROLLED SINGLE LONGITUDINAL MODE LASER TRANSMITTER MODULE [J].

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ELECTRONICS LETTERS, 1981, 17 (24) :931-933

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