RADIATION-DAMAGE IN SCIENTIFIC CHARGE-COUPLED-DEVICES

被引:69
作者
JANESICK, J
ELLIOTT, T
POOL, F
机构
关键词
D O I
10.1109/23.34503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:572 / 578
页数:7
相关论文
共 14 条
[1]  
CHADDERTON L, 1965, RAD DAMAGE CRYSTALS, P168
[2]  
DAMERELL CJS, 1986, RAL86077 RUTH APPL L
[3]   EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON [J].
HIRATA, M ;
HIRATA, M ;
SAITO, H ;
CRAWFORD, JH .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) :2433-&
[5]  
JANESICK J, 1988, AUG SPIE OPT OPT APP
[6]  
JANESICK J, 1987, OPT ENG, V26, P890
[7]  
JANESICK JR, 1981, P SOC PHOTO-OPT INST, V290, P165
[8]  
KILLIANY JM, 1980, TOP APPL PHYS, V38, P147
[9]   COUNTING OF DEEP-LEVEL TRAPS USING A CHARGE-COUPLED DEVICE [J].
MCGRATH, RD ;
DOTY, J ;
LUPINO, G ;
RICKER, G ;
VALLERGA, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2555-2557
[10]  
Mohsen A. M., 1974, IEEE Transactions on Electron Devices, VED-21, P701, DOI 10.1109/T-ED.1974.17997