INFLUENCE OF ATMOSPHERE ON MOLTEN SILICON DENSITY

被引:6
作者
IKARI, A
SASAKI, H
TOKIZAKI, E
TERASHIMA, K
KIMURA, S
机构
[1] Kimura Metamelt Project, ERATO, JRDC, Tsukuba, 300-26
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 8B期
关键词
SILICON; DENSITY; MELT; HYDROGEN; SOLUBILITY;
D O I
10.1143/JJAP.34.L1017
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of atmosphere on the density of molten silicon has been studied. The density was measured by an improved Archimedean method with the accuracy of 1.1%. The density under argon gas mixed with hydrogen 7.15% is found to be equivalent to that under pure argon gas at the melting; point, but showed higher values at higher temperatures (1430-1500 degrees C) with the thermal volume expansion coefficient of about 8.8 x 10(-5) K-1. The density under the hydrogen-containing argon also shows a time-dependent variation over 5 h after melting. The solubility of hydrogen in molten silicon is estimated to be below 3 x 10(18) atoms cm(-3). This result suggests that the increase of the density in the presence of hydrogen is caused by the change of the arrangement of the silicon atoms.
引用
收藏
页码:L1017 / L1019
页数:3
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