DENSITY-MEASUREMENT OF MOLTEN SILICON BY AN IMPROVED ARCHIMEDIAN METHOD

被引：45

作者：

SASAKI, H

TOKIZAKI, E

TERASHIMA, K

KIMURA, S

机构：

[1] Kimura Metamelt Project, ERATO, JRDC, Tsukuba, Ibaraki, 300-26, Satellite-2

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 139卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)90170-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A convenient technique for practicing accurate Archimedian density measurements of molten silicon was developed and the temperature dependence of the density was obtained in the range of about 1440 to 1640-degrees-C. The density at 1440-degrees-C was about 1% larger than the previously reported value. A change in the dependence slope was observed near 1540-degrees-C. Thermal volume expansion coefficients of about 1.0 X 10(-4) and 2.8 X 10(-4)-degrees-C-1 were obtained for temperatures below and above 1540-degrees-C, respectively.

引用

页码：225 / 230

页数：6

共 13 条

[1]

GABATHULER JP, 1979, Z NATURFORSCH A, V34, P1314

[2]

Glazov V. M., 1969, LIQUID SEMICONDUCTOR

[3] THE SURFACE-TENSION OF LIQUID SILICON [J].