AL-GA INTERDIFFUSION IN HEAVILY CARBON-DOPED ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES

被引：15

作者：

GUIDO, LJ ^{[1
]}

CUNNINGHAM, BT ^{[1
]}

NAM, DW ^{[1
]}

HSIEH, KC ^{[1
]}

PLANO, WE ^{[1
]}

MAJOR, JS ^{[1
]}

VESELY, EJ ^{[1
]}

SUGG, AR ^{[1
]}

HOLONYAK, N ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.345560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Impurity-induced layer disordering experiments on AlxGa 1-xAs-GaAs quantum well heterostructures (QWHs) that are doped heavily with carbon are described. The data show that carbon doping retards Al-Ga interdiffusion relative to an undoped crystal, and that interdiffusion in C-doped QWHs is not enhanced by a Ga-rich (versus As-rich) annealing ambient. The data are inconsistent with most Fermi-level-effect models for layer disordering that do not include chemical impurity dependence or sublattice dependence, and that do not consider the possibility of inhibited Al-Ga interdiffusion in extrinsic crystals.

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页码：2179 / 2182

页数：4

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共 12 条

[1] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J].

CAMRAS, MD ;

HOLONYAK, N ;

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

PAOLI, TL ;

LINDSTROM, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5637-5641

[2] CARBON DIFFUSION IN UNDOPED, N-TYPE, AND P-TYPE GAAS [J].

CUNNINGHAM, BT ;

GUIDO, LJ ;

BAKER, JE ;

MAJOR, JS ;

HOLONYAK, N ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1989, 55 (07) :687-689

[3] HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE [J].

CUNNINGHAM, BT ;

HAASE, MA ;

MCCOLLUM, MJ ;

BAKER, JE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1905-1907

[4] LASER TRANSITION AND WAVELENGTH LIMITS OF GAAS [J].

DAPKUS, PD ;

HOLONYAK, N ;

ROSSI, JA ;

WILLIAMS, FV ;

HIGH, DA .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3300-&

[5] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

[6] IMPURITY DIFFUSION AND LAYER INTERDIFFUSION IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N ;

PLANO, WE ;

ROBBINS, VM ;

DALLESASSE, JM ;

HSIEH, KC ;

BAKER, JE .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1838-1844

[7] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

GUIDO, LJ ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

PLANO, WE ;

BURNHAM, RD ;

THORNTON, RL ;

EPLER, JE ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1372-1379

[8] THERMAL ANNEALING AND PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH SE AND MG SHEET DOPING [J].

KALISKI, RW ;

NAM, DW ;

DEPPE, DG ;

HOLONYAK, N ;

HSIEH, KC ;

BURNHAM, RD .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :998-1005

[9] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J].

KAWABE, M ;

SHIMIZU, N ;

HASEGAWA, F ;

NANNICHI, Y .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :849-850

[10] STUDY OF INTERDIFFUSION IN A TE-DOPED ALAS-GAAS SUPERLATTICE [J].

MEI, P ;

SCHWARZ, SA ;

VENKATESAN, T ;

SCHWARTZ, CL ;

COLAS, E .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2165-2167