IMPURITY DIFFUSION AND LAYER INTERDIFFUSION IN ALXGA1-XAS-GAAS HETEROSTRUCTURES

被引：46

作者：

DEPPE, DG ^{[1
]}

HOLONYAK, N ^{[1
]}

PLANO, WE ^{[1
]}

ROBBINS, VM ^{[1
]}

DALLESASSE, JM ^{[1
]}

HSIEH, KC ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1838 / 1844

页数：7

共 26 条

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[3] CASEY HC, 1973, ATOMIC DIFFUSION SEM, P367
[4] LAYER INTERDIFFUSION IN SE-DOPED ALXGA1-XAS-GAAS SUPERLATTICES
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 581 - 583
[5] BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 998 - 1000
[6] SENSITIVITY OF SI DIFFUSION IN GAAS TO COLUMN-IV AND COLUMN-VI DONOR SPECIES
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 129 - 131
[7] BERYLLIUM DIFFUSION ACROSS GAAS/(AL,GA)AS HETEROJUNCTIONS AND GAAS/ALAS SUPERLATTICES DURING MBE GROWTH
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FOXON, CT
JOYCE, BA
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GOWERS, JP
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (02): : 195 - 200
[8] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[9] ARSENIC PRESSURE-DEPENDENCE OF INTERDIFFUSION OF ALGAAS/GAAS INTERFACE IN QUANTUM-WELL
FURUYA, A
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L926 - L928
[10] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL
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MOREHEAD, F
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4617 - 4619

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