CHEMICAL BEAM EPITAXY OF INXAS1-XP/INP STRAINED SINGLE AND MULTIQUANTUM-WELL STRUCTURES

被引：7

作者：

BENSAOULA, A ^{[1
]}

ROSSIGNOL, V ^{[1
]}

BENSAOULA, AH ^{[1
]}

FREUNDLICH, A ^{[1
]}

机构：

[1] LPSES,CNRS,F-06560 VALBONNE,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality pseudomorphically strained InAsxP1-x/InP superlattices and strained multiquantum wells (SMQW) were grown by chemical beam epitaxy (CBE). The As versus P incorporation ratios in ternary InAsP layers is investigated showing that CBE is perfectly suited for a successful control of As composition in such heterostructures. InAs1-xPx/InAs SMQWs with As composition ranging from 30% to 70% were reproducibly realized. The control of InAsP well thickness and composition on the scale of the monolayer as determined through x-ray diffraction analysis is achieved.

引用

页码：851 / 853

页数：3

共 9 条

[1] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE [J].