CHARACTERIZATION OF ION-IMPLANTED SILICON BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND ELLIPSOMETRY

被引：6

作者：

LOHNER, T

KOTAI, E

PASZTI, F

MANUABA, A

FRIED, M

GYULAI, J

机构：

来源：

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY | 1984年 / 83卷 / 01期

关键词：

D O I：

10.1007/BF02209296

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：75 / 81

页数：7

共 11 条

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[5] CHARACTERIZATION OF ION-IMPLANTED SILICON BY ELLIPSOMETRY AND CHANNELING [J].

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[7] IMPROVED DEPTH RESOLUTION OF CHANNELING MEASUREMENTS IN RUTHERFORD BACKSCATTERING BY A DETECTOR TILT [J].

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