CHARACTERIZATION OF ION-IMPLANTED SILICON BY ELLIPSOMETRY AND CHANNELING

被引：35

作者：

LOHNER, T

MEZEY, G

KOTAI, E

PASZTI, F

MANUABA, A

GYULAI, J

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90857-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：615 / 620

页数：6

共 37 条

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[7] A 4-PHASE COMPLEX REFRACTIVE-INDEX MODEL OF ION-IMPLANTATION DAMAGE - OPTICAL-CONSTANTS OF PHOSPHORUS IMPLANTS IN SILICON [J].

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[8] OPTICAL-CONSTANTS OF ARSENIC AND BORON IMPLANTS IN SILICON DETERMINED BY A 4-PHASE COMPLEX REFRACTIVE-INDEX MODEL [J].

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