A 4-PHASE COMPLEX REFRACTIVE-INDEX MODEL OF ION-IMPLANTATION DAMAGE - OPTICAL-CONSTANTS OF PHOSPHORUS IMPLANTS IN SILICON

[1] DETERMINATION OF COMPLEX REFRACTIVE-INDEX PROFILES IN P+31 ION-IMPLANTED SILICON BY ELLIPSOMETRY [J]. SURFACE SCIENCE, 1975, 49 (02) : 441 - 458

[2] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[3] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[4] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[5] Beaglehole D., 1970, Journal of Non-Crystalline Solids, V4, P272, DOI 10.1016/0022-3093(70)90051-7

[6] INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5052 - 5056

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] IBRAHIM MM, 1972, SURF SCI, V30, P662

[9] IBRAHIM MM, 1971, J OPT SOC AM, V61, P1662

[10] Kucirkova A., 1976, Radiation Effects, V28, P129, DOI 10.1080/00337577608237430

[1] DETERMINATION OF COMPLEX REFRACTIVE-INDEX PROFILES IN P+31 ION-IMPLANTED SILICON BY ELLIPSOMETRY [J]. SURFACE SCIENCE, 1975, 49 (02) : 441 - 458

[2] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[3] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[4] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[5] Beaglehole D., 1970, Journal of Non-Crystalline Solids, V4, P272, DOI 10.1016/0022-3093(70)90051-7

[6] INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5052 - 5056

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] IBRAHIM MM, 1972, SURF SCI, V30, P662

[9] IBRAHIM MM, 1971, J OPT SOC AM, V61, P1662

[10] Kucirkova A., 1976, Radiation Effects, V28, P129, DOI 10.1080/00337577608237430