AN INVESTIGATION OF ION-BOMBARDED SILICON BY ELLIPSOMETRY AND CHANNELING EFFECT

被引：12

作者：

LOHNER, T

MEZEY, G

KOTAI, E

MANUABA, A

PASZTI, F

DEVENYI, A

GYULAI, J

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 199卷 / 1-2期

关键词：

D O I：

10.1016/0167-5087(82)90244-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：405 / 408

页数：4

共 22 条

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[9] ELLIPSOMETRIC AND CHANNELING STUDIES ON ION-IMPLANTED SILICON [J].

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[10] THE ROLE OF SURFACE CLEANING IN THE ELLIPSOMETRIC STUDIES OF ION-IMPLANTED SILICON [J].

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