THE ROLE OF SURFACE CLEANING IN THE ELLIPSOMETRIC STUDIES OF ION-IMPLANTED SILICON

被引：10

作者：

LOHNER, T

VALYI, G

MEZEY, G

KOTAI, E

GYULAI, J

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1981年 / 54卷 / 3-4期

关键词：

D O I：

10.1080/00337578108210055

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：251 / 252

页数：2

共 11 条

[1] DETERMINATION OF COMPLEX REFRACTIVE-INDEX PROFILES IN P+31 ION-IMPLANTED SILICON BY ELLIPSOMETRY
ADAMS, JR
BASHARA, NM
[J]. SURFACE SCIENCE, 1975, 49 (02) : 441 - 458
[2] COMPLEX REFRACTIVE-INDEX AND PHOSPHORUS CONCENTRATION PROFILES IN P-31(+) ION-IMPLANTED SILICON BY ELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY
ADAMS, JR
[J]. SURFACE SCIENCE, 1976, 56 (01) : 307 - 315
[3] INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY
DOBBS, BC
ANDERSON, WJ
PARK, YS
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5052 - 5056
[4] CHARACTERIZATION OF ION-IMPLANTED GAAS BY ELLIPSOMETRY
KIM, Q
PARK, YS
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2024 - 2029
[5] Kucirkova A., 1976, Radiation Effects, V28, P129, DOI 10.1080/00337577608237430
[6] LOHNER T, 1980, P C ION BEAM MODIFIC
[7] IMPROVED DEPTH RESOLUTION OF CHANNELING MEASUREMENTS IN RUTHERFORD BACKSCATTERING BY A DETECTOR TILT
MEZEY, G
KOTAI, E
LOHNER, T
NAGY, T
GYULAI, J
MANUABA, A
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 235 - 237
[8] CHARACTERIZATION OF (P-31)+-IMPLANTED SI LAYERS BY ELLIPSOMETRY
NAKAMURA, K
GOTOH, T
KAMOSHIDA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 3985 - 3989
[9] ELLIPSOMETRIC STUDY OF SILICON IMPLANTED WITH BORON IONS IN LOW-DOSES
WATANABE, K
MIYAO, M
TAKEMOTO, I
HASHIMOTO, N
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 518 - 519
[10] ELLIPSOMETRIC STUDY OF ANNEALING PROCESSES OF PHOSPHORUS-ION-IMPLANTED LAYERS OF SI
WATANABE, K
MOTOOKA, T
HASHIMOTO, N
TOKUYAMA, T
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 451 - 453

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