ELLIPSOMETRIC STUDY OF ANNEALING PROCESSES OF PHOSPHORUS-ION-IMPLANTED LAYERS OF SI

被引：14

作者：

WATANABE, K

MOTOOKA, T

HASHIMOTO, N

TOKUYAMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.91543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：451 / 453

页数：3

共 11 条

[1] COMPLEX REFRACTIVE-INDEX AND PHOSPHORUS CONCENTRATION PROFILES IN P-31(+) ION-IMPLANTED SILICON BY ELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY [J].

ADAMS, JR .

SURFACE SCIENCE, 1976, 56 (01) :307-315

[2] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[3]

CSEPREGI L, 1978, J APPL PHYS, V49, P3908

[4] ELLIPSOMETRIC STUDY OF 400 EV ION DAMAGE IN SILICON [J].

IBRAHIM, MM ;

BASHARA, NM .

SURFACE SCIENCE, 1972, 30 (03) :632-&

[5] THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN [J].

KAMIGAKI, Y ;

ITOH, Y .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :2891-2896

[6]

Kucirkova A., 1976, Radiation Effects, V28, P129, DOI 10.1080/00337577608237430

[7] MEASUREMEMT OF THICKNESS AND REFRACTIVE INDEX OF VERY THIN FILMS AND OPTICAL PROPERTIES OF SURFACES BY ELLIPSOMETRY [J].

MCCRACKIN, FL ;

PASSAGLIA, E ;

STROMBERG, RR ;

STEINBERG, HL .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1963, A 67 (04) :363-+

[8] OPTICAL REFLECTION STUDIES OF DAMAGE IN ION IMPLANTED SILICON [J].

MCGILL, TC ;

KURTIN, SL ;

SHIFRIN, GA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :246-+

[9] ELLIPSOMETRIC STUDY OF SILICON IMPLANTED WITH BORON IONS IN LOW-DOSES [J].

WATANABE, K ;

MIYAO, M ;

TAKEMOTO, I ;

HASHIMOTO, N .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :518-519

[10]

YEN ET, 1975, 4TH P INT C ION IMPL, P501

← 1 2 →