COMPLEX REFRACTIVE-INDEX AND PHOSPHORUS CONCENTRATION PROFILES IN P-31(+) ION-IMPLANTED SILICON BY ELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY

被引：15

作者：

ADAMS, JR ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

SURFACE SCIENCE | 1976年 / 56卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90455-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：307 / 315

页数：9

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