COMPLEX REFRACTIVE-INDEX AND PHOSPHORUS CONCENTRATION PROFILES IN P-31(+) ION-IMPLANTED SILICON BY ELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY

被引：15

作者：

ADAMS, JR ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

SURFACE SCIENCE | 1976年 / 56卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90455-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：307 / 315

页数：9

相关论文

共 18 条

[11] Przyborski W., 1969, Radiat. Eff. Defects Solids, V1, P33
[12] ELLIPSOMETRIC ANALYSIS OF RADIATION DAMAGE IN DIELECTRICS
SCHROEDE.JB
DIESELMA.HD
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2559 - &
[13] ERROR ANALYSIS OF ANGLE OF INCIDENCE MEASUREMENTS
SCHUELER, DG
[J]. SURFACE SCIENCE, 1969, 16 : 104 - &
[14] SIGMUND P, 1967, P INT C APPLICATIONS, P215
[15] THIN FILM THICKNESS MEASUREMENT USING SILVER-MODIFIED NEWTONS RINGS
STERN, BJ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (02) : 152 - &
[16] SECONDARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON
TAMURA, M
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 651 - 653
[17] DETECTABILITY LIMITS FOR BORON AND PHOSPHORUS IN SILICON BY AUGER-ELECTRON SPECTROSCOPY (AES)
THOMAS, JH
MORABITO, JM
[J]. SURFACE SCIENCE, 1974, 41 (02) : 629 - 633
[18] WILSON RG, 1973, ION BEAMS WITH APPLI