ELLIPSOMETRIC STUDY OF SILICON IMPLANTED WITH BORON IONS IN LOW-DOSES

被引：31

作者：

WATANABE, K

MIYAO, M

TAKEMOTO, I

HASHIMOTO, N

机构：

[1] Central Research Laboratory, Hitachi Ltd, Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.90848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ellipsometry was applied to estimate crystal damage in silicon caused by boron-ion implantation in low doses. A highly sensitive parameter for crystal damage is proposed which is derived from the extinction coefficient of the complex refractive index. Crystal damage caused by ion implantation at doses as low as 3×1011 cm-2 and the annealing effect on crystal damage of heat treatment in dry N2 ambient after ion implantation were clearly detected by the parameter.

引用

页码：518 / 519

页数：2

共 11 条

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