ELLIPSOMETRIC AND CHANNELING STUDIES ON ION-IMPLANTED SILICON

被引：6

作者：

LOHNER, T

MEZEY, G

KOTAI, E

PASZTI, F

KIRALYHIDI, L

VALYI, G

GYULAI, J

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90781-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：591 / 594

页数：4

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