SURFACE CONTAMINATION OF SILICON PRODUCED BY ION-IMPLANTATION

被引：10

作者：

YAMAGUCHI, M ^{[1
]}

HIRAYAMA, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,IBARAKI ELECT COMMUN LAB,TOKAI,IBARAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 02期

关键词：

D O I：

10.1143/JJAP.15.365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：365 / 372

页数：8

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