ELECTRON-SPIN RESONANCE IN ARGON-ION-IMPLANTED SILICON

被引：7

作者：

CHU, KC

HURREN, WR

HALE, E

REIGLE, J

机构：

[1] UNIV MISSOURI,DEPT PHYS,ROLLA,MO 65401

[2] UNIV MISSOURI,MAT RES CTR,ROLLA,MO 65401

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.1662935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4243 / 4243

页数：1

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