BASIC PROPERTIES OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES CONTAINING BORAZON AND DIAMOND LAYERS PRODUCED BY THE REACTIVE PULSE PLASMA METHOD

被引：41

作者：

SZMIDT, J ^{[1
]}

JAKUBOWSKI, A ^{[1
]}

MICHALSKI, A ^{[1
]}

RUSEK, A ^{[1
]}

机构：

[1] TECH UNIV WARSAW,INST MAT SCI,PL-02524 WARSAW,POLAND

来源：

THIN SOLID FILMS | 1983年 / 110卷 / 01期

关键词：

D O I：

10.1016/0040-6090(83)90169-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7 / 20

页数：14

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