GROWTH OF SIC ON SILICON IN A LOW-PRESSURE VERTICAL REACTOR

被引：3

作者：

IRVINE, KG ^{[1
]}

JENKINS, I ^{[1
]}

GIVENS, W ^{[1
]}

SPENCER, MG ^{[1
]}

ALUKO, M ^{[1
]}

机构：

[1] HOWARD UNIV,SCH ENGN,DEPT CHEM ENGN,WASHINGTON,DC 20059

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

D O I：

10.1016/0921-5107(92)90198-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of SiC on silicon using the SiH4, C3H8 and H-2 system in a vertical reactor is reported. Computer simulations predict that for the vertical geometry investigated, high flow velocities are necessary to prevent forced convection. Experimental results verify the computer prediction and under optimal conditions highly uniform growths are achieved. Thickness variations less than 7% are obtained for growth thicknesses greater than 20-mu-m.

引用

页码：93 / 96

页数：4