AN EXPERIMENTAL INVESTIGATION OF EDGE-GROWTH EFFECTS IN THE LPE GROWTH OF GAAS AND GAALAS

被引：9

作者：

ASTLES, MG

HILL, H

STEWARD, VW

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 62卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90008-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：61 / 66

页数：6

共 8 条

[1]

ASTLES M, UNPUB

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RODE, DL ;

SOBERS, RG .

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[5]

RODE DL, 1977, TECH DIGEST, V46, P29

[6] EXPLANATION FOR PHENOMENON OF MENISCUS LINES ON SURFACES OF (GAAL)AS ALLOYS GROWN BY LPE [J].

SMALL, MB ;

BACHEM, KH ;

POTEMSKI, RM .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :216-222

[7] USE OF SAPPHIRE LINERS TO ELIMINATE EDGE GROWTH IN LPE (AL,GA)AS [J].

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REYNOLDS, CL .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (02) :325-329

[8]

1980, CRC HDB CHEM PHYSICS

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